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| N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2- NOVEMBER 94 2N7000 S G D TO92 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Emitter Voltage Continuous Drain Current Pulsed Drain Current Gate Source Vootage Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCES ID IDM VGS Ptot Tj:Tstg VALUE 60 0.2 0.5 40 400 -55 to +150 UNIT V A A V mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Voltage (1) Static Drain-Source On-State Resistance (1) Forward Transconductance(1)(2) Input Capacitance (2) Common Source Output Capacitance (2) SYMBOL MIN. BVDSS VGS(th) IGSS IDSS ID(on) VDS(on) RDS(on) gfs Ciss Coss 100 60 25 5 10 10 75 2.5 0.4 5 60 0.8 3.0 10 1 1 MAX. UNIT CONDITIONS. V V nA A mA mA V V mS pF pF pF ns ns VDD 15V, ID=500mA Rg=25, RL=25 VDS=25V, VGS=0V, f=1MHz ID=10A, VGS=0V ID=1mA, VDS= VGS VGS= 15V, VDS=0V VDS=48V, VGS=0 VDS=48V, VGS=0V, T=125C(2) VDS=10V, VGS=4.5V VGS=10V,ID=500mA VGS=4.5V,ID=75mA VGS=10V,ID=500mA VDS=10V,ID=200mA Reverse Transfer Capacitance (2) Crss Turn-On Time (2)(3) Turn-Off Time (2)(3) t(on) t(off) (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator 3-12 |
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